Electronics For You

Solving Gate Leakage In GaN Devices

A gate design cuts leakage, raises threshold voltage, and improves stability in GaN power devices, clearing a barrier to wider use in power systems.
Electronic Design

Designing Isolated Gate Drivers for SiC MOSFETs in Traction Inverters

Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
EDN

Motor drive design: Integrated drivers vs. gate drivers

When designing a motor control circuit, it’s vital to determine how to deliver the high current required to drive the motor. Designers must choose whether to use monolithic integrated circuits (ICs) ...
Electronic Design

Gate Drivers Keep Up with GaN’s Fast Switching Speed

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.