While punch throughs (PTs) are the preferred power device for a growing segment of industrial power conversion applications requiring operation from ac line voltages of 575Vac to 690Vac, historically, ...
After successfully launching the 7th generation Micro-Pattern Trench (MPT) technology-based discrete IGBT new products in Q2 2024, PARA LIGHT ELECTRONICS CO., LTD. (Referred to as"Para Light" ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...
The NX series IGBT modules offer a new package design that provides multiple configuration options, improved manufacturability, reduced development time, and lower cost from previous models. The ...
Compared with existing NPT technology for IGBTs, SPT reduces on-state losses by 20% and switching losses by 20% - without increasing thermal resistance. When asked for their wish list for future ...
Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
Chinese chipmakers are keen on developing homegrown automotive power semiconductors, particularly IGBT chips and modules long in shortage, looking to replace part of foreign supplies from Infineon and ...
Santa Clara, Calif. – Ixys Corp.'s dual 2-amp MOSFET/IGBT driver (IXD_402) and single 9-A device (IXD_409) are optimized to drive large-volume, midpower-range insulated-gate bipolar transistors and ...
Dublin, Aug. 06, 2020 (GLOBE NEWSWIRE) -- The "Automotive IGBT Industry Report, 2020" report has been added to ResearchAndMarkets.com's offering. IGBT (Insulated Gate Bipolar Transistor) is a fully ...
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