Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

AOS’ AOTL037V60DE2 600V MOSFET is designed to meet the growing demand for high efficiency and high-power density across a ...

Alpha and Omega Semiconductor unveils 600V Super Junction MOSFET platform, expanding its high‑voltage power portfolio.

International Rectifier announces an automotive DirectFET2 power MOSFET chipset optimized for dc-dc applications used in internal combustion engine (ICE) cars, hybrid, and electric vehicles.

This application note presents the MOSFET/IGBT drivers theory and its applications. The document describes an introduction of the MOSFET and IGBT technology, the types of drivers, isolation techniques ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...

Traditional solutions often rely on two large MOSFETs to meet stringent specs -- 20A current rating, 28-30V breakdown voltage, and less than or equal to 5 milliohms ON-resistance -- resulting in ...

ROHM has developed a 30V N-channel MOSFET, the AW2K21, in a common-source configuration that achieves an ON-resistance of 2.0mΩ (typ.) in a compact 2.0mm × 2.0mm package. The AW2K21 has adopted a ...

Santa Clara, CA and Kyoto, Japan, July 08, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the AW2K21, a 30V N-channel MOSFET in a common-source configuration that ...