Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
The ZXMS6004FF self-protected low-side MOSFET packaged in a 2.3 x 2.8-mm SOT23F package requires 85% less board space than the incumbent 7.3 x 6.7-mm SOT223 package. It is the newest addition the ...