GENEVA, SWITZERLAND—A power MOSFET developed by STMicroelectronics takes advantage of the company’s ribbon-bonding technology. This delivers a low typical RDS(on) of 800 micro-ohms, which ST claims is ...
SAN DIEGO--(BUSINESS WIRE)--StratEdge Corporation, leader in the design, production, and assembly of high frequency and high power semiconductor packages for microwave, millimeter-wave, and high-speed ...
From STMicroelectronics, the STV300NH02L power MOSFET provides micro-ohm on-resistance to reduce losses in power supply systems such as server applications where n-channel MOSFETs are used to parallel ...
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