Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

CAMARILLO, Calif.--(BUSINESS WIRE)--Semtech Corporation (Nasdaq: SMTC), a leading supplier of high-performance analog and mixed-signal semiconductors and advanced algorithms, announced the ...

Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.

Vishay Intertechnology, Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for ...

Cree, Inc., a market leader in silicon carbide (SiC) power devices, has introduced a series of packaged diodes that deliver the industry’s highest blocking voltage available in SiC Schottky technology ...

Infineon Technologies AG expands the comprehensive SiC portfolio introducing the 5th generation1200V thinQ!™ SiC Schottky diodes. Infineon Technologies AG expands the comprehensive SiC portfolio ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

Schottky diode is composed of a metal in contact with a semiconductor. Despite its simple construction, Schottky diode is a tremendously useful component and is omnipresent in modern electronics.

In looking at any buck converter point-of-load regulator designed today, chances are that it uses synchronous rectification rather than a conventional diode for freewheeling. Synchronous rectification ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...