Abstract: Based on 3DG110 transistors and special gated NPN (GNPN) transistors, the characteristic of the synergistic effect between ionization and displacement defects induced by 40-MeV silicon (Si) ...
Abstract: Combined effects of transient ionizing and electro-magnetic pulse on vertical NPN bipolar transistor were experimentally investigated under pulsed X-ray irradiation. Technology ...
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Customer stories Events & webinars Ebooks & reports Business insights GitHub Skills ...
Sylvania ECG Semiconductors 1979 Master Replacement Guide ECG212Jscanned: 2020-11-17pages: 356resolution: 3271x4381 @ 400dpipost-processed: noOCR: no ...
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