Abstract: A novel device integrating all the functions of the three-transistor Dynamic Random Access Memory (3T-DRAM) into one-transistor (1T) layout is demonstrated with 22 nm fully depleted ...
It used to be a rite of passage to be able to do the math necessary to design various bipolar transistor amplifier configurations. This doesn’t come up as often as it used to, but it is still a good ...
Abstract: This study investigates neutron-induced displacement damage in bipolar junction transistors (BJTs) using technology computer-aided design (TCAD) models informed by deep-level ...
Researchers announced that they have achieved the world's first elucidation of how hydrogen produces free electrons through ...
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