The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics. The EPC2366 showcases our ongoing commitment to help engineers ...

GaN-, and silicon-based power transistors, modules, and other basic building blocks for more robust, efficient, and ...

In one instance, to further enhance output voltage swing and linearity, the authors propose a novel “breakdown-voltage (BV) ...

Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...

An ancient, fundamental cooling technique gets a new, more-efficient implementation via an innovative fiber matrix.

Imec and KU Leuven researchers published “Integration and electrical evaluation of WS2 and MoS2 fets in a 300 mm pilot line.” ...

Rongrui He and Peidong Yang have reported giant uniaxial piezoresistance in p-type silicon nanowires that is almost two orders of magnitude larger than that found in bulk silicon 1. Here, I show that ...

Abstract: 1 Abstract-The high-temperature capability of power devices is one of the effective ways to enhance the power density of converters. Thermal runaway is an acknowledged issue associated with ...

In contrast to silicon for instance it lacks a bandgap, which is essential to guarantee controlled and reliable transistor operation. Writing in Nature Materials, Richard Balog and co-workers 1 ...