Abstract: In this paper, the carrier trapping behavior and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) under different bias conditions are studied based on the ...
Enabling higher power within the same rack space, Microchip’s MCPF1525 power module delivers up to 25 A per device, stackable ...
Abstract: Combined effects of transient ionizing and electro-magnetic pulse on vertical NPN bipolar transistor were experimentally investigated under pulsed X-ray irradiation. Technology ...
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