SEOUL, South Korea--(BUSINESS WIRE)--Magnachip Semiconductor Corporation (NYSE: MX, “Magnachip”) today announced the launch of its new series of Insulated Gate Bipolar Transistors (IGBTs) designed for ...
Abstract: Fatigue-induced delamination of the direct-bonded copper (DBC) solder layer is a critical and latent failure mode in multichip Insulated Gate Bipolar Transistor (IGBT) power modules. To ...
Abstract: In this paper, the fundamental physical mechanisms and performance characteristics of phosphorus-implanted and hydrogen-implanted Field-Stop-insulated gate bipolar transistor (FS-IGBT) are ...
Researchers announced that they have achieved the world's first elucidation of how hydrogen produces free electrons through ...
Associate Professor Yuichiro Matsushita of Materials and Structures Laboratory, Institute of Science Tokyo, Mitsubishi Electric Corporation, Associate Professor Takahide Umeda of Institute of Pure and ...
The TDK-Lambda HFE rack mount industrial power supply series now supports power levels of 3500W. The new series – HFE3500 – aims at applications including factory automation, industrial printing, RF ...
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