Key market opportunities in the Gallium Nitride (GaN) transistor sector include enhancing power efficiency and density, strategic innovation in design and packaging, and leveraging resilient supply ...
Abstract: For the first time, we present a one-transistor dynamic random access memory (DRAM) cell using the ferroelectric polarization-assisted charge trapping phenomenon. The gate structure is ...
Abstract: The high-voltage sub-nanosecond pulses with high repetition rate are widely used. The Marx-bank circuit (MBC) based on the avalanche bipolar junction transistor (ABJT) is an important and ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results