IEEE

Study on Various Device Structures for Steep-Switching Silicon-on-Insulator Feedback Field-Effect Transistors

Abstract: The feedback field-effect transistor (FBFET) is a new type of transistor that uses a positive feedback mechanism, which enables the FBFET to exhibit steep-switching characteristics, i.e., ...
IEEE

High-Performance GaN Vertical Fin Power Transistors on Bulk GaN Substrates

Abstract: This letter reports a GaN vertical fin power field-effect-transistor structure with submicron fin-shaped channels on bulk GaN substrates. In this vertical transistor design only n-GaN layers ...
C&EN

Transferrable AlGaN/GaN High-Electron Mobility Transistors to Arbitrary Substrates via a Two-Dimensional Boron Nitride Release Layer

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C&EN

Field-Effect Transistors Based on Single Nanowires of Conducting Polymers

Department of Chemical and Environmental Engineering and Center for Nanoscale Science and Engineering, University of California, Riverside, California 92521, and Department of Electrical and Computer ...