As the U.S. stock market navigates through a mix of economic signals, including potential leadership changes at the Federal Reserve and fluctuating commodity prices, investors are evaluating their ...

The bipolar transistor line covers a wide operating voltage range, enabling compatibility with 12V, 24V, and 48V automotive platforms. Diodes Incorporated expanded its automotive-qualified bipolar ...

The first CMOS chip was created by Fairchild Semiconductor, presented at ISSCC in 1963. The logic topologies used in today’s textbooks originated in this work. P-type devices are slower than N-type by ...

Abstract: This study investigates neutron-induced displacement damage in Bipolar Junction Transistors (BJTs) using TCAD models informed by Deep-Level-Transient-Spectroscopy (DLTS) data. These models ...

Insulated gate bipolar transistors (IGBTs) are a type of power semiconductor device that combine the best features of both bipolar junction transistors (BJTs) and metal-oxide semiconductor ...

It is made from a sandwich of three layers of semiconductor material: two layers of n-type material, which is a semiconductor doped with elements that provide extra electrons, and one layer of p-type ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...

Ideal Power has been granted a patent for a method of operating a bi-directional double-base bipolar junction transistor (B-TRAN) in a power module. The method involves conducting load current, ...