The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power electronics. The EPC2366 showcases our ongoing commitment to help engineers ...
Abstract: With the continuous downscaling of transistors, stacked transistors are considered as the most important candidate for next-generation technology due to their area-efficient nature of 3-D ...
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It is beginning to look like Intel plans to milk the impending 18A manufacturing process for a long time. The 18A process is akin to a refined 2 nanometer process, which is funny because Intel never ...
Despite the benefit of DEP for improving sensor operation, its use in conjunction with GFET sensors is very limited in the literature. Most notably, Kumar et al. used DEP to enhance GFET sensor ...
Abstract: We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided ...
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