Imec and KU Leuven researchers published “Integration and electrical evaluation of WS2 and MoS2 fets in a 300 mm pilot line.” ...
Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...
AZoRobotics on MSN
What if robots could smell danger before we see it?
Advanced electronic noses and algorithms are transforming robotic olfaction, enabling machines to detect odors for improved ...
Abstract: The miniaturization of Si-MOS-FET logic integrated circuits necessitates the precise control of electron and hole densities through high-concentration impurity doping to realize transistors ...
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Recently in material science news from China we hear that [Hailin Peng] and his team at Peking University just made the world’s fastest transistor and it’s not made of silicon. Before we tell you ...
A NIMS research team has successfully developed the world’s first n-channel diamond MOSFET, a breakthrough that enables the creation of diamond-based CMOS integrated circuits for high-performance use ...
This relay is capable of operating at ambient temperatures of up to 125˚C, marking an improvement on previous iterations which were limited to ambient temperatures of 110˚C. As a MOS FET relay, the ...
USTC team reports 1.4 kV/2.0 mΩ·cm 2 regrowth-free vertical GaN trench MIS-FET featuring high inversion channel mobility of 205 cm 2 /V·s with monocrystal-like AlN nitridation interfacial-layer To ...
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