One of the good things about simulating circuits is that you can easily change component values trivially. In the real world, you might use a potentiometer or a pot to provide an adjustable value.
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
Alpha and Omega Semiconductor Limited announced its AOLV66935, a 100V High Safe Operating Area (SOA) MOSFET in an LFPAK 8×8 package. AOS’s latest MOSFET is designed as an ideal solution for 48V Hot ...
State-of-the-art MOSFET handles higher peak currents delivering a cost-effective, high-performance and enhanced reliability hot swap solution Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL) ...
From smartphones and CPUs to electric vehicles and power supplies, there's one tiny component that makes modern technology possible: the MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In ...
Toshiba Launches 100V N-Channel Power MOSFET with Its Latest Generation Process Technology[1] to Improve Efficiency in Switched-Mode Power Supplies for Industrial Equipment Toshiba Electronic Devices ...
ROHM Semiconductor’s AW2K21 consists of a pair of 30-V N-channel power MOSFETs, configured in a common-source configuration that delivers an on-resistance of just 2.0 mΩ (typ.) in a compact 2.0- × 2.0 ...
iDEAL Semiconductor is now sampling the first products in its new series of silicon MOSFETs that leverage its SuperQ architecture to deliver efficiencies and performance that rival some compound ...
SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of discrete power devices, wide band gap ...
If the car battery terminals are reverse connected during a jump start, vehicle upkeep, or repair, components in the associated automotive electronics modules may be damaged if they cannot handle the ...
With on-resistance down to 0.88mΩ typical at 10V, the device minimises power losses from conduction to increase efficiency while improving thermal performance with a low maximum RthJC of 0.36°C/W.