Abstract: Combined effects of transient ionizing and electro-magnetic pulse on vertical NPN bipolar transistor were experimentally investigated under pulsed X-ray irradiation. Technology ...
Abstract: Based on 3DG110 transistors and special gated NPN (GNPN) transistors, the characteristic of the synergistic effect between ionization and displacement defects induced by 40-MeV silicon (Si) ...
From computers to smartphones, from smart appliances to the internet itself, the technology we use every day only exists ...
Clay Halton was a Business Editor at Investopedia and has been working in the finance publishing field for more than five years. He also writes and edits personal finance content, with a focus on ...
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