Vishay Intertechnology is introducing four 100V Gen 2 Trench MOS Barrier Schottky (TMBS) rectifier modules. They are in the ...
A team of UK researchers working at the University of Leeds, supported by colleagues from University College London (UCL) and ...
RIR Power Electronics today announced the launch of its Silicon Carbide Merged-PiN Schottky diodes, marking a significant advancement in power device technology for next-generation electric vehicles, ...
Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.
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Modern researchers try to bring to life the idea of a scientist who lived more than a hundred years ago. We are talking about ...
Opportunities lie in automotive electrification, telecom infrastructure, precision sensing, and collaboration for supply resilience and tech innovation in discrete diodes market. Discrete Diodes ...
MALVERN, PA — Vishay Intertechnology (NYSE: VSH) recently introduced four new 100-volt Gen 2 Trench MOS Barrier Schottky ...
Vishay Intertechnology, Inc. has introduced four new 100V Gen 2 Trench MOS Barrier Schottky (TMBS) rectifier modules in the compact, fully insulated SOT-227 package. Optimised for power conversion in ...
Vishay Intertechnology, Inc. has introduced four new 100 V Gen 2 Trench MOS Barrier Schottky (TMBS) rectifier modules in the compact, fully insulated SOT-227 package. Optimized for power conversion in ...
Abstract: The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the ...
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